Citation
Gs. Virdi et al., Effect of ion beam irradiation on metal silicon junctions, J ELEC MAT, 30(10), 2001, pp. 1313-1316
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235
→ ACNP
Volume
30
Issue
10
Year of publication
2001
Pages
1313 - 1316
Database
ISI
SICI code
0361-5235(200110)30:10<1313:EOIBIO>2.0.ZU;2-I
Abstract
The effect of MeV and low energy nitrogen implantation on the electrical pr
operties of metal semiconductor junctions is studied. It is found that MeV
implantation has better contact performance is comparison to keV nitrogen i
mplantation. The defects introduced due to MeV implantation have very littl
e effect on contact formation,