The effects of charge carriers on the magnetic behavior of ferromagnetic semiconductors within single-site approximation

Citation
M. Ghanaatshoar et al., The effects of charge carriers on the magnetic behavior of ferromagnetic semiconductors within single-site approximation, J MAGN MAGN, 236(1-2), 2001, pp. 190-197
Citations number
41
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
236
Issue
1-2
Year of publication
2001
Pages
190 - 197
Database
ISI
SICI code
0304-8853(200110)236:1-2<190:TEOCCO>2.0.ZU;2-3
Abstract
Coherent potential approximation (CPA) is used to study the effects of char ge carriers on the magnetic properties of ferromagnetic semiconductors. We have used a generalized mean-field theory for fluctuating f spins, and Vons ovskii model for interaction of conduction electrons with localized spins t o calculate the edge of conduction band, the magnetization, the electron-sp in polarization and the magnetic transition temperature. The results of our calculations are compared with the RKKY theory and the experimental result s for Gd-doped EuO. (C) 2001 Elsevier Science B.V. All rights reserved.