All-silicon mode-mixing router based on the plasma-dispersion effect

Citation
G. Coppola et al., All-silicon mode-mixing router based on the plasma-dispersion effect, J OPT A-P A, 3(5), 2001, pp. 346-354
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS
ISSN journal
14644258 → ACNP
Volume
3
Issue
5
Year of publication
2001
Pages
346 - 354
Database
ISI
SICI code
1464-4258(200109)3:5<346:AMRBOT>2.0.ZU;2-3
Abstract
This paper reports on the theoretical and numerical description of an optoe lectronic router integrated in a silicon-on-silicon waveguide structure. Th e device is based on the mode-mixing principle together with the injection- induced optical phase shift. The structure consists of a single-mode all-si licon input waveguide, followed by a two-mode section, which acts as the ac tive region, and a single-mode output Y-branch to separate the two output c hannels. The fundamental mode from the input waveguide excites both the fun damental mode and the first higher-order mode in the active region. The spa tial interference between these propagating modes produces a periodically r epeated optical intensity distribution along the propagation axis. Moreover , the active region is designed to allow a pi shift between the two modes w hen a bipolar mode field effect transistor, which injects and controls the free carrier plasma inside the active region, is driven from the OFF state to the ON state. By doing so, it is possible to steer light from one output channel to the other. Electrical and optical simulations have been carried out for the evaluation of the performance of the device. These simulations show optical propagation losses around 3 dB cm(-1), an overall crosstalk o f -10 dB, a transient rise time of 8.2 ns and a fall time of 7.2 ns.