Chemisorption and decomposition of thiophene and furan on the Si(100)-2 x 1 surface: A quantum chemical study

Citation
X. Lu et al., Chemisorption and decomposition of thiophene and furan on the Si(100)-2 x 1 surface: A quantum chemical study, J PHYS CH B, 105(41), 2001, pp. 10069-10075
Citations number
44
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
105
Issue
41
Year of publication
2001
Pages
10069 - 10075
Database
ISI
SICI code
1520-6106(20011018)105:41<10069:CADOTA>2.0.ZU;2-7
Abstract
The chemisorption and decomposition of thiophene (C4H4S) and furan (C4H4O) on the reconstructed Si(100)-2 x I surface has been investigated by means o f the hybrid density functional (B3LYP) method in combination with a cluste r model approach. Two chemisorption mechanisms, i.e., [4 + 2] and [2 + 2] c ycloadditions of C4H4X (X = S,O) onto a surface dimer site, have been consi dered comparatively. The calculations revealed that the former process is b arrierless and favorable over the latter, which requires a small activation energy (2.6 kcal/mol for thiophene and 1.2 kcal/mol for furan). The di-sig ma bonded surface species formed by [4 + 2] cycloaddition-type chemisorptio n can either undergo further [2 + 2] cycloaddition with a neighboring Si=Si dimer site, giving rise to a tetra-sigma bonded surface species, or underg o deoxygenation (desulfurization) by transferring the heteroatom to a neigh boring Si=Si dimer site, leading to a six-member ring metallocyclic C4H4Si2 surface species. The latter process was found to be slightly more favorabl e than the former, especially in the case of thiophene.