A comprehensive model has been developed to study low-pressure, high-densit
y plasma processing reactors. The model couples plasma generation and trans
port self-consistently to fluid flow and gas energy equations. The model an
d the simulation software have been used to analyse chlorine plasmas used i
n metal etching. The effect of the inductive coil frequency on the plasma c
haracteristics has been examined and found to influence plasma uniformity o
nly moderately. Model predictions for a CF4 plasma have been found to agree
well with experimental results.