Modelling of inductively coupled plasma processing reactors

Citation
D. Bose et al., Modelling of inductively coupled plasma processing reactors, J PHYS D, 34(18), 2001, pp. 2742-2747
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
34
Issue
18
Year of publication
2001
Pages
2742 - 2747
Database
ISI
SICI code
0022-3727(20010921)34:18<2742:MOICPP>2.0.ZU;2-9
Abstract
A comprehensive model has been developed to study low-pressure, high-densit y plasma processing reactors. The model couples plasma generation and trans port self-consistently to fluid flow and gas energy equations. The model an d the simulation software have been used to analyse chlorine plasmas used i n metal etching. The effect of the inductive coil frequency on the plasma c haracteristics has been examined and found to influence plasma uniformity o nly moderately. Model predictions for a CF4 plasma have been found to agree well with experimental results.