Silicon micromachining using a high-density plasma source

Dry etching of Si is critical in satisfying the demands of the micromachini ng industry. The micro-electro-mechanical systems (MEMS) community requires etches capable of high aspect ratios, vertical profiles, good feature size control and etch uniformity along with high throughput to satisfy producti on requirements. Surface technology systems' (STS's) high-density inductive ly coupled plasma (ICP) etch tool enables a wide range of applications to b e realized whilst optimizing the above parameters. Components manufactured from Si using an STS ICP include accelerometers and gyroscopes for military, automotive and domestic applications. STS's advan ced silicon etch (ASE (TM)) has also allowed the first generation of MEMS-b ased optical switches and attenuators to reach the marketplace, In addition , a specialized application for fabricating the next generation photolithog raphy exposure masks has been optimized for 200 mm diameter wafers, to dept hs of similar to 750 mum. Where the profile is not critical, etch rates of greater than 8 mum min(-1) have been realized to replace previous methods such as wet etching. This i s also the case for printer applications. Specialized applications that req uire etching down to pyrex or oxide often result in the loss of feature siz e control at the interface; this is an industry wide problem. STS have deve loped a technique to address this. The rapid progression of the industry has led to development of the STS ICP etch tool, as well as the process.