Effect of PVF interface barrier layer on TSD behaviour of a-Se films

Authors
Chand, S Sharma, GD Dwivedi, S Agarwal, A Chandra, R
Citation
S. Chand et al., Effect of PVF interface barrier layer on TSD behaviour of a-Se films, J PHYS D, 34(18), 2001, pp. 2822-2824
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
34
Issue
18
Year of publication
2001
Pages
2822 - 2824
Database
ISI
SICI code
0022-3727(20010921)34:18<2822:EOPIBL>2.0.ZU;2-N
Abstract
Thermally stimulated discharge (TSD) current behaviour of amorphous seleniu m (a-Se) films (similar to 100 mum thick) has been studied as a function of polyvinyl fluoride (PVF) interface barrier layer thickness in the range of 2000-8000 Angstrom (temperature range of 295-385 K). TSD spectra of these films show that charge storage in a-Se reduces considerably on incorporatio n of a PVF interface barrier layer. These effects have been attributed to t he blocking and field enhanced mobility role of the PVF interface layer.