Precursor-derived Si-B-C-N ceramics: Oxidation kinetics

Authors
Butchereit, E Nickel, KG Muller, A
Citation
E. Butchereit et al., Precursor-derived Si-B-C-N ceramics: Oxidation kinetics, J AM CERAM, 84(10), 2001, pp. 2184-2188
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN journal
00027820 → ACNP
Volume
84
Issue
10
Year of publication
2001
Pages
2184 - 2188
Database
ISI
SICI code
0002-7820(200110)84:10<2184:PSCOK>2.0.ZU;2-6
Abstract
The oxidation behavior of three precursor-derived ceramics Si4.46BC7.32N4.4 0 (AMF2p), Si2.72BC4.51N2.69 (AMF3p), and Si3.08BC4.39N2.28 (T2/1p)-was inv estigated at 1300 degrees and 1500 degreesC. Scale growth at 1500 degreesC in air can be approximated by a parabolic rate law with rate constants of 0 .0599 and 0.0593 mum(2)/h for AMF3p and T2/1p, respectively. The third mate rial does not oxidize according to a parabolic rate law, but has a similar scale thickness after 100 h. The results show that at least within the expe rimental times these ceramics develop extremely thin scales, thinner than p ure SiC or Si3N4.