Nanoscale densification creep in polymer-derived silicon carbonitrides at 1350 degrees C

Authors
Citation
Sr. Shah et R. Raj, Nanoscale densification creep in polymer-derived silicon carbonitrides at 1350 degrees C, J AM CERAM, 84(10), 2001, pp. 2208-2212
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN journal
00027820 → ACNP
Volume
84
Issue
10
Year of publication
2001
Pages
2208 - 2212
Database
ISI
SICI code
0002-7820(200110)84:10<2208:NDCIPS>2.0.ZU;2-U
Abstract
The measurement of axial and radial strains during uniaxial compression cre ep of SiCN shows the deformation to be entirely volumetric (as opposed to s hear). Phenomenologically, the densification strain rate shows a good fit t o an exponential stress dependence. This result is explained by the large v olume of the diffusing molecular units in the oligomeric amorphous structur e of SiCN, which causes the driving force to become nonlinear in stress. Th e size of the diffusing unit is estimated to be 1.2 nm.