Lead zirconate titanate thin films on base-metal foils: An approach for embedded high-permittivity passive components

Citation
Jp. Maria et al., Lead zirconate titanate thin films on base-metal foils: An approach for embedded high-permittivity passive components, J AM CERAM, 84(10), 2001, pp. 2436-2438
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN journal
00027820 → ACNP
Volume
84
Issue
10
Year of publication
2001
Pages
2436 - 2438
Database
ISI
SICI code
0002-7820(200110)84:10<2436:LZTTFO>2.0.ZU;2-3
Abstract
An approach for embedding high-permittivity dielectric thin films into glas s epoxy laminate packages has been developed. Lead lanthanum zirconate tita nate (Pb0.85La0.15-(Zr0.52Ti0.48)(0.96)O-3, PLZT) thin films were prepared using chemical solution deposition on nickel-coated copper foils that were 50 mum thick. Sputter-deposited nickel top electrodes completed the all-bas e-metal capacitor stack. After high-temperature nitrogen-gas crystallizatio n anneals, the PLZT composition showed no signs of reduction, whereas the b ase-metal foils remained flexible. The capacitance density was 300-400 nF/c m(2), and the loss tangent was 0.01-0.02 over a frequency range of 1-1000 k Hz. These properties represent a potential improvement of 2-3 orders of mag nitude over currently available embedded capacitor technologies for polymer ic packages.