Investigation by convergent beam electron diffraction of the stress aroundshallow trench isolation structures

Convergent beam electron diffraction (CBED) is used in this study to invest igate the stress distribution around shallow trench isolation (STI) structu res. Attention is given to the influence of the different processing parame ters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavi or. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyse s are compared with micro-Raman and bright-field transmission electron micr oscopy measurements. (C) 2001 The Electrochemical Society.