Development of evaluation method for organic contamination on silicon wafer surfaces

Citation
S. Ishiwari et al., Development of evaluation method for organic contamination on silicon wafer surfaces, J ELCHEM SO, 148(11), 2001, pp. G644-G648
Citations number
28
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
148
Issue
11
Year of publication
2001
Pages
G644 - G648
Database
ISI
SICI code
0013-4651(200111)148:11<G644:DOEMFO>2.0.ZU;2-4
Abstract
A method, called the silicon plate method, has been developed using a small sampling device with a clean simple process, in order to directly evaluate organic contamination on a silicon wafer surface that came from the cleanr oom air. Using this method, the concentration of bis(2-ethylhexyl)phthalate on the silicon wafer surface is experimentally shown, for the first time, to reach a steady state which has a relationship with its concentration in the cleanroom air. The experimental results are consistent with those theor etically predicted using the model of multicomponent organic species adsorp tion-induced contamination; therefore, the silicon plate method is conclude d to be effective for evaluating the time-dependent behavior of organic spe cies on the silicon wafer surface. (C) 2001 The Electrochemical Society.