In situ quartz crystal microbalance and quadrupole mass spectrometry studies of atomic layer deposition of aluminum oxide from trimethylaluminum and water

Reaction mechanisms in the atomic layer deposition of Al2O3 from Al(CH3)(3) and water were studied with a quartz crystal microbalance at 150-350 degre esC and with a quadrupole mass spectrometer at 150-400 degreesC. The growth rate was the highest at 250 degreesC. At lower temperatures the growth was limited due to kinetic reasons and at higher temperatures due to lower amo unt of surface -OH groups. About half of the ligands were released during t he Al(CH3)(3) pulse and the other half during the water pulse. The reaction temperature had no marked effect on the growth mechanisms, in the temperat ure range studied.