Cs. Son et al., DEPENDENCE OF CARBON INCORPORATION ON CRYSTALLOGRAPHIC ORIENTATION OFGAAS AND ALGAAS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USINGCBR4, Journal of applied physics, 82(3), 1997, pp. 1205-1207
The electrical properties of CBr4-doped GaAs and Al0.3Ga0.7As epilayer
s grown on GaAs substrates with various surface crystallographic orien
tations from (100) toward (111)A were investigated. Carbon incorporati
on into GaAs and AlGaAs epilayers was performed by atmospheric pressur
e metalorganic chemical vapor deposition using CBr4. The electrical pr
operties of the epilayers showed a strong crystallographic orientation
dependence. With an increase of the surface offset single, the hole c
oncentration of CBr4-doped GaAs and AlGaAs epilayers rapidly decreased
showing a hump at (311)A. The trend of the hole concentration depende
nce on the offset angle was not changed with growth temperatures in th
e range of 550-650 degrees C. Carbon incorporation is much higher in A
lGaAs than in GaAs. (C) 1997 American Institute of Physics.