INTENSE FIELD EFFECTS ON HYDROGEN IMPURITIES IN QUANTUM DOTS

Citation
Fy. Qu et al., INTENSE FIELD EFFECTS ON HYDROGEN IMPURITIES IN QUANTUM DOTS, Journal of applied physics, 82(3), 1997, pp. 1236-1241
Citations number
31
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
3
Year of publication
1997
Pages
1236 - 1241
Database
ISI
SICI code
0021-8979(1997)82:3<1236:IFEOHI>2.0.ZU;2-B
Abstract
Calculations of the binding energy of an on-center donor hydrogenic im purity in quasizero-dimensional quantum-well system [quantum dot (QD)] placed in an intense, high-frequency laser field are presented. A non perturbative theory and a variational approach are used as the framewo rk for this calculation. The effect of the intense laser field is to ' 'dress'' the impurity potential making it dependent upon the laser fie ld amplitude. A rapid decrease of the binding energy, for different va lues of the QI) radius and for both infinite and finite potential barr iers, with increasing field intensity is predicted. An application is made for a spherical QD made of GaAs/Ga1-xAlxAs heterostructures. (C) 1997 American Institute of Physics.