Calculations of the binding energy of an on-center donor hydrogenic im
purity in quasizero-dimensional quantum-well system [quantum dot (QD)]
placed in an intense, high-frequency laser field are presented. A non
perturbative theory and a variational approach are used as the framewo
rk for this calculation. The effect of the intense laser field is to '
'dress'' the impurity potential making it dependent upon the laser fie
ld amplitude. A rapid decrease of the binding energy, for different va
lues of the QI) radius and for both infinite and finite potential barr
iers, with increasing field intensity is predicted. An application is
made for a spherical QD made of GaAs/Ga1-xAlxAs heterostructures. (C)
1997 American Institute of Physics.