ATOMIC-FORCE AND SCANNING-TUNNELING-MICROSCOPY STUDY OF CURRENT-VOLTAGE PROPERTIES OF TIB2 MICROCONTACTS

Citation
M. Heuberger et al., ATOMIC-FORCE AND SCANNING-TUNNELING-MICROSCOPY STUDY OF CURRENT-VOLTAGE PROPERTIES OF TIB2 MICROCONTACTS, Journal of applied physics, 82(3), 1997, pp. 1255-1261
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
3
Year of publication
1997
Pages
1255 - 1261
Database
ISI
SICI code
0021-8979(1997)82:3<1255:AASSOC>2.0.ZU;2-E
Abstract
Scanning probe microscopy was used to investigate electrical microcont acts in the nanometer range, With the atomic force microscope current flowing through the contact as well as current-voltage characteristics of the contact as a function of the force acting on the contact itsel f were recorded. With the scanning tunneling microscope current-voltag e characteristics and voltage at constant current characteristics were measured as a function of the contact position. From these experiment s we conclude that a TiB2 microcontact can sustain a maximum voltage o f about 0.1-1 V before melting. These results were confirmed by a theo retical model. The implications for the functioning of so-called posit ive temperature coefficient current limiting devices based on filled p olymers is discussed. (C) 1997 American Institute of Physics.