SIMPLE-MODEL FOR THE DIELECTRIC-CONSTANT OF NANOSCALE SILICON PARTICLE

Citation
R. Tsu et al., SIMPLE-MODEL FOR THE DIELECTRIC-CONSTANT OF NANOSCALE SILICON PARTICLE, Journal of applied physics, 82(3), 1997, pp. 1327-1329
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
3
Year of publication
1997
Pages
1327 - 1329
Database
ISI
SICI code
0021-8979(1997)82:3<1327:SFTDON>2.0.ZU;2-Z
Abstract
As the physical size approaches several nanometers, reduction in the s tatic dielectric constant epsilon becomes significant. A modified Penn model, taking into account the quantum confinement induced discrete e nergy states, was applied to a sphere and to a wire, The calculated si ze dependent epsilon is consistent with the wave-vector-dependent epsi lon(q). However, this form of epsilon is more amenable for calculation s of donor and exciton binding energies in a finite quantum confined n anoparticle when a full electrostatic boundary value problem must be t ackled. The results of our model compare favorably with other, far mor e sophisticated, calculations. (C) 1997 American Institute of Physics.