IMPACT NEUTRALIZATION OF D- IONS IN GAAS AND INP

Citation
A. Dargys et al., IMPACT NEUTRALIZATION OF D- IONS IN GAAS AND INP, Journal of applied physics, 82(3), 1997, pp. 1479-1481
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
82
Issue
3
Year of publication
1997
Pages
1479 - 1481
Database
ISI
SICI code
0021-8979(1997)82:3<1479:INODII>2.0.ZU;2-T
Abstract
Impact neutralization coefficient for the reaction D-+e-->D-0+2e is re ported, where D- and DO are the negatively charged and neutral donor, respectively, and e is the conduction band electron. The coefficient w as calculated using the Boltzmann transport equation and the scaled ne utralization cross section of the negatively charged hydrogen atom. At liquid helium and lower temperatures the above reaction for n-GaAs an d n-InP doped with shallow donors was found to be characterized by a r elatively large impact neutralization coefficient. At weak electric fi elds, from about 0.2 to 1 V/cm, the neutralization coefficient increas es exponentially and at higher fields saturates at the value of about 1.5 x 10(-3) cm(3)/s for n-GaAs and 9 x 10(-4) cm(3)/s for n-InP. (C) 1997 American Institute of Physics.