AlGaAs antidot arrays with about 10(7) antidots are produced by single
-shot interference processing with a pulsed high-power Nd:YAG laser sy
stem. We apply magnetotransport experiments and atomic force microscop
y (AFM) to explore the electronic and geometric properties of the arra
ys. The size of the antidot arrays are 3 mmx3 mm and the period varies
from 400 to 1000 nm. The dots are elliptic or circular and have diame
ters ranging from 255 to 690 nm. The magnetotransport experiments are
performed at 1.5 K in van der Pauw contact configuration. The laser st
ructuring leaves the two dimensional electron density nearly unchanged
but decreases the mobility by a factor of about 30. Several maxima ar
e detected in the low magnetic field magnetoresistivity which are disc
ussed based on the geometric data determined by AFM. (C) 1997 American
Institute of Physics.