Growth, morphology, and microindentation analysis of Bi2Se3, Bi1.8In0.2Se3, and Bi2Se2.8Te0.2 single crystals

Authors
Augustine, S Mathai, E
Citation
S. Augustine et E. Mathai, Growth, morphology, and microindentation analysis of Bi2Se3, Bi1.8In0.2Se3, and Bi2Se2.8Te0.2 single crystals, MATER RES B, 36(13-14), 2001, pp. 2251-2261
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
36
Issue
13-14
Year of publication
2001
Pages
2251 - 2261
Database
ISI
SICI code
0025-5408(20011101)36:13-14<2251:GMAMAO>2.0.ZU;2-V
Abstract
Bismuth Selenide single crystals have been grown by the vertical normal fre ezing technique. Confirmation of the compound formation and the lattice par ameters are calculated from the X-ray diffractogram. SEM studies show the p arallel cleavage lines in Te-doped samples. Triangular etch pits are obtain ed on the (111) planes of Bi2Se3. Microindentation studies are carried out on the same plane to understand the mechanical behavior. Annealing and quen ching effects of microhardness are evaluated. (C) 2001 Elsevier Science Ltd . All rights reserved.