Recovery stage of polycrystalline-Si prepared by excimer laser annealing

By irradiating the multi-pulse excimer laser with the energy density smalle r than 200 mJ/cm(2) on the amorphous silicon (a-Si), the crystallinity of t he Si increases, as increasing the number of the pulse. During the first la ser irradiation some part of the melted a-Si becomes the polycrystalline (p oly)-Si which corresponds to the nucleus, and after the second irradiation the poly-Si does not melt and the remaining a-Si becomes the poly-Si. The c rystal growth of the poly-Si proceeds by the solid phase crystallization (S PC). Crystal growth of poly-Si by excimer laser annealing (ELA) is discusse d by considering the recovery stage. This stage is examined from the relati onship between the amorphous Si area and the total irradiation time. The fa ct that the measured data coincides with the theoretical data indicates tha t the recovery proceeds during the ELA at the low energy density.