alpha-Functionalized terthiophenes containing disulfide (-S-T-3-H)(2)
and alkanethiol (HS-(CH2)(11)-T-3-H) anchoring groups have been synthe
sized for direct immobilization onto gold. Monolayer structures of the
se compounds are prepared by spontaneous assembly from ethanol solutio
ns on evaporated gold substrates and thoroughly characterized by ellip
sometry, contact angle goniometry, infrared and X-ray photoelectron sp
ectroscopy, and cyclic voltammetry. The two molecules coordinate to th
e gold substrate exclusively via the anchoring groups upon formation o
f gold-thiolate bonds. The kinetics of monolayer formation vary dramat
ically for the two compounds. The alkanethiol analogue assembles rapid
ly, within a few minutes, and forms a densely packed and highly organi
zed monolayer, with the alkyl chains in an almost perfect all-trans co
nformation and the C-alpha-C-alpha axis of the alpha-T-3 units tilted
about 14 degrees away from the surface normal. The assembly process is
much slower for the disulfide, but an organized monolayer with an ave
rage alpha-T-3 chain tilt of about 33 degrees will eventually form whe
n the assembly is allowed to equilibrate with a solution containing th
e disulfide for at least 1 day. Moreover, the two monolayer assemblies
also display a remarkably different electrochemical, behavior. The he
terogeneous electron-transfer rate at the disulfide-covered gold subst
rate is almost indistinguishable from that at bare gold, suggesting th
at the assembly contains a large number of easily accessible defects.
An alternative mechanism for explaining the large electron-transfer ra
te involving electronic coupling via the conjugated pi-system of the a
lpha-T-3 units is also proposed. The electrochemical response is signi
ficantly reduced for the HS-(CH2)(11)-T-3-H assembly, but another type
of defects, the so-called ''shallow defects'' originating from sparse
ly populated areas on the electrode surface, can be identified.