Strain-dependent optical emission in In1-xGaxAs/InP quantum wells - art. no. 153301

Citation
Hap. Tudury et al., Strain-dependent optical emission in In1-xGaxAs/InP quantum wells - art. no. 153301, PHYS REV B, 6415(15), 2001, pp. 3301
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6415
Issue
15
Year of publication
2001
Database
ISI
SICI code
0163-1829(20011015)6415:15<3301:SOEIIQ>2.0.ZU;2-7
Abstract
InGaAs/InP strained-layer modulation-doped quantum wells were studied by ph otoluminescence. The combination of the built-in strain and the quantum con finement in this system leads to a strong valence band mixing yielding dire ct and indirect band gap structures. We demonstrate that the optical emissi on line shape is strongly dependent on the valence band dispersion and it i s a good method to distinguish between direct and indirect structures. The application of an external biaxial tensile strain to the samples provides a n additional evidence of direct-to-indirect band gap transition in strained heterostructures.