We report on magnetoconductance measurements of a submicrometer-wide constr
iction in a two-dimensional electron gas with a tunable central gate. For n
egative central gate biases, an edge channel loop forms around the central-
gate potential hump and couples to reflected edge channels, opening a forwa
rd scattering pathway. From the conductance contribution of this pathway we
deduce that the transmission probability for tunneling between adjacent ed
ge channels of different Landau levels is 0.5, corresponding to the strong-
coupling limit, for a coupling region of only a few hundred nanometers in l
ength.