Formation of a Si(100)c(8X2) surface phase using H-induced self-organization and H extraction - art. no. 153406

A Si(100)c (8 x 2) surface phase has been fabricated using atomic-hydrogen- induced self-organization followed by hydrogen extraction by the tip of sca nning tunneling microscope. Similar to a conventional Si(100)2x1 surface, t he new phase is built of Si dimer rows, but with every second dimer row bei ng missing. The second-layer Si atoms in the troughs between dimer rows are also dimerized. The second-layer Si dimers at the opposite sides of a top Si dimer row demonstrate a tendency to be out of phase. This configuration induces buckling of the top Si dimer with a c (8 x 2) periodicity.