Large electronically mediated sputtering in gold films - art. no. 155407

Citation
A. Gupta et Dk. Avasthi, Large electronically mediated sputtering in gold films - art. no. 155407, PHYS REV B, 6415(15), 2001, pp. 5407
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6415
Issue
15
Year of publication
2001
Database
ISI
SICI code
0163-1829(20011015)6415:15<5407:LEMSIG>2.0.ZU;2-N
Abstract
Electronically mediated sputtering in thin gold films, bombarded with 200-M eV Ag ions, has been observed by ex-situ thickness measurements of the film using x-ray reflectivity technique. The observed sputter yield depends upo n the film thickness and is about 410 atoms per incident ion for films of t hickness 150 Angstrom and 235 atoms per incident ion in 450-Angstrom -thick film. This sputtering rate is a few orders of magnitude higher as compared to that normally encountered in the regime of elastic collisions. Reduced mobility of the electrons due to scattering from the surface and the grain boundaries plays an important role in enhancing the effects of electronic e xcitations. Sputtering is accompanied by a significant smoothening of the f ilm surface and smearing of the boundaries between the grains.