Nitrogen evolution from copper nitride films by MeV ion impact

Citation
S. Ghosh et al., Nitrogen evolution from copper nitride films by MeV ion impact, RADIAT EFF, 154(2), 2001, pp. 151-163
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150 → ACNP
Volume
154
Issue
2
Year of publication
2001
Pages
151 - 163
Database
ISI
SICI code
1042-0150(2001)154:2<151:NEFCNF>2.0.ZU;2-Y
Abstract
Copper nitride thin films deposited by the rf reactive sputtering technique at three different substrate temperatures are irradiated by 200 MeV Au15ions. The on-line fluence dependent elastic recoil detection analysis (ERDA ) study shows loss (> 400 atoms/ion) of nitrogen from the films. The deplet ion rate of N is quite high as compared to sputtering rate normally observe d in the regime of elastic collisions. This is attributed to the electronic ally mediated energy loss (S.) which in this case is dominant as compared t o the energy loss due to nuclear collisions (Sn). The aspects based on the physical properties of the films (surface morphology and crystallinity) tha t play an important role in enhancing the coupling of the energy of inciden t ions to the lattice atoms, causing atomic ejection are discussed. Crystal linity and surface morphology of the Wins are studied by the grazing angle X-ray diffraction (GAXRD) and the atomic force microscopy (AFM) techniques.