Spectroscopic ellipsometry for monitoring and control of surfaces, thin layers and interfaces

Spectroscopic ellipsometry can provide information non-destructively on lay er thickness, composition, refractive index, crystallinity and surface/inte rface roughness. This article discusses its use for ex situ/inline monitori ng and in situ/real-time control. Examples are given based on silicon epita xial surfaces, GaN nucleation layers, SiGe/Si and other multilayer structur es. Real-time data analysis methods are discussed and in situ spectroscopic ellipsometry is shown to provide insights into surface effects during SiGe epitaxial growth. (C) Crown Copyright 2001. Published by John Wiley & Sons , Ltd.