Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering

The possibility of obtaining a detailed picture of the electronic structure makes surface photovoltage spectroscopy (SPS) eminently suitable for bridg ing the gap between the chemical, physical, optical and electrical properti es of semiconductors. In SPS, changes in band bending (both at the free sem iconductor surface and at buried interfaces) are monitored as a function of external illumination. Surface photovoltage spectroscopy can provide detai led, quantitative information on bulk properties (e.g. bandgap and type, ca rrier diffusion length and lifetime) and can be used for complete construct ion of surface and interface band diagrams, including the measurement of en ergy levels in quantum structures. A particular strength is that a comprehe nsive analysis of surface and bulk defect state distributions and propertie s is made possible. Measurements using SPS are contactless and non-destruct ive. In addition, they can be performed both in situ and ex situ, at any re asonable temperature, on any semiconducting material, at any ambient and at any lateral resolution down to the atomic scale. This review starts with a n overview of SPS-related surface and interface theory, describes the SPS e xperimental set-up and presents applications for surface and interface char acterization of a wide variety of materials and structures, cross-correlati ng them with other methodologies. Copyright (C) 2001 John Wiley & Sons, Ltd .