Angle-resolved inverse photoemission of the (2 x 1)-reconstructed 3C-SiC(001) surface

We have investigated the two-domain (2 x 1)-reconstructed 3C-SiC(001) surfa ce using angle-resolved inverse photoemission. An unoccupied surface state band at E-SS = 2.0 eV with respect to the valence band maximum (VBM) at the <(<Gamma>)over bar> point is completely located within the bulk band gap. Further, an unoccupied surface resonance at E-SR = 3.6 eV above VBM is obse rved. Both surface structures show no dispersion in <(<Gamma>J)over bar> an d <(<Gamma>J ' )over bar> directions, respectively. The energetic position of both is in good agreement with LDA surface band structure calculations. However, LDA calculations predict a dispersion of about 0.8-1.0 eV for the surface state band and about 0.5-0.8 eV for the surface resonance band, whi le experimentally no dispersion in <(<Gamma>J)over bar> and <(<Gamma>J ' )o ver bar> directions is observed. (C) 2001 Elsevier Science B.V. All rights reserved.