Pb. Joyce et al., Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots, SURF SCI, 492(3), 2001, pp. 345-353
The change in shape and surface morphology of InAs/GaAs(0 0 1) quantum dots
(QDs) during their initial encapsulation by GaAs has been studied using re
flection high energy electron diffraction (RHEED) and scanning tunnelling m
icroscopy (STM). The shape of the QDs changes significantly during the earl
iest stages of overgrowth. In situ RHEED measurements show a significant ch
evron angle change after deposition of only 2 ML of GaAs, before losing all
crystallographic structure as more GaAs is deposited. STM results indicate
significant surface mass transport, the height of the QDs decreases faster
than the rate at which the GaAs capping layer is deposited and the QDs eff
ectively "collapse" during the earliest stages of encapsulation. The area o
f the partially capped QDs increases significantly with increasing GaAs dep
osition and there is an anistropic increase in shape with significant elong
ation along the [1 1 0] azimuth. (C) 2001 Elsevier Science B.V. All rights
reserved.