Guiding principles for device-grade hydrogenated amorphous silicon films and design of catalytic chemical vapor deposition apparatus

The guiding principles for obtaining device-grade hydrogenated amorphous si licon (a-Si:H) films with high deposition rate on large-area substrates by catalytic chemical vapor deposition (Cat-CVD) are presented. The most impor tant points are controlling both the heat flow and the atomic H. Other poin ts of note are the suppression of silicide formation on the catalyzer and c ontrol of the gas flow. Solar cells and thin-film transistors using a-Si:H films thus obtained show excellent device performance. Large-area depositio n, high deposition rate and high efficiency of gas use are also promising f or the application of Cat-CVD a-Si:H films to these devices. (C) 2001 Elsev ier Science B.V. All rights reserved.