Formation of silicon films for solar cells by the Cat-CVD method

We have investigated the formation of poly-Si photoactive films by the cata lytic chemical vapor deposition (Cat-CVD) method. By optimum control of the substrate deposition temperature, poly-Si films with a crystalline fractio n higher than 90% and dangling-bond density of 2.5 x 10(16) cm(-3) were obt ained at a deposition rate greater than 10 Angstrom s(-1). It was also foun d that the lateral grain size of the poly-Si films increases from 0.1 to 0. 5 mum by suppressing, chemical transport from the chamber wall. (C) 2001 El sevier Science B.V, All rights reserved.