Highly conducting doped microcrystalline silicon (mu c-Si : H) at very lowsubstrate temperature by Cat-CVD

In this paper we report the synthesis of highly conducting doped hydrogenat ed micro-crystalline silicon films, prepared by Cat-CVD deposition using si lane and trimethyl boron (TMB) with hydrogen dilution at substrate temperat ures as low as 110 degreesC, having a conductivity of approximately 1 Omega (-1) cm(-1). All the films are microcrystalline and show the characteristi c X-ray signature pertaining to the same. The optical transmission data als o reveal a high transmission over the spectral range of 450-600 nm. The var iation in film characteristics with gas pressure was also studied, and reve als that the pressure is a very important parameter in determining the micr ocrystallinity of the films. The hydrogen dilution was varied over the rang e 30-70 sccm. However, no significant effect on the room-temperature conduc tivity was observed over this range. (C) 2001 Elsevier Science B.V. All rig hts reserved.