Low temperature epitaxial growth of Si and Si1-yCy films by hot wire cell method

The Hot Wire (HW) Cell method was applied to grow epitaxial Si films at a s ubstrate temperature of 200 degreesC. C2H2 gas was added to this system and C containing epitaxial Si films were also obtained. After annealing the fi lms at 600-700 degreesC, the vibration mode at 607 cm(-1), which indicated the presence of the C atoms located at the Si substitutional sites, was obs erved in Fourier transform infrared absorption and Raman scattering spectro scopy. The X-ray diffraction peak of the annealed films shifted to a,greate r extent compared to the substrate, which indicated the decrease in the lat tice constant of the epitaxial layer. The carbon composition was controlled by changing the partial pressure of the C2H2 gas and we successfully obtai ned 0.8 at.% substitutional carbon composition. (C) 2001 Elsevier Science B .V. All rights reserved.