Fabrication of amorphous carbon nitride films by hot-wire chemical vapor deposition

Amorphous carbon nitride (a-C1-xTx:H) films were fabricated by hot-wire che mical vapor deposition (HWCVD) using a mixture Of C2H2 and NH3 gases. The n itrogen concentration of a-C1-xNx:H films increased as the ratio of the NH3 flow to the total gas flow rate increased. Infrared absorption peaks due t o vibration of the triple bond between carbon and nitrogen (C=N) were not o bserved for a-C1-xNx:H films prepared by HWCVD, suggesting that the amount of C=N bonding was reduced by this method. (C) 2001 Elsevier Science B.V. A ll rights reserved.