Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature

Authors
Sato, H Izumi, A Masuda, A Matsumura, H
Citation
H. Sato et al., Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature, THIN SOL FI, 395(1-2), 2001, pp. 280-283
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
395
Issue
1-2
Year of publication
2001
Pages
280 - 283
Database
ISI
SICI code
0040-6090(20010903)395:1-2<280:LSNFFC>2.0.ZU;2-W
Abstract
A low-temperature process for preparing low-k silicon nitride (SiN) has bee n successfully developed using catalytic chemical vapor deposition (Cat-CVD ). A low-k SiN film, formed at 250 degreesC with a permittivity of 4, showe d good Cu barrier properties. (C) 2001 Elsevier Science BN. All rights rese rved.