High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

We have developed high performance amorphous silicon thin film transistors by catalytic chemical vapor deposition (Cat-CVD) method. The amorphous sili con films deposited at a high rate (1.9 nm s(-1)) have shown a low spin den sity (1.6X10(16) cm(-3)), measured by electron spin resonance. Thin film tr ansistors, with a field effect mobility of approximately 0.85 cm(2) V(-1)s( -1), were obtained with the gate SiNx and phosphorous-doped amorphous silic on layers also fabricated by Cat-CVD. (C) 2001 Elsevier Science B.V. All ri ghts reserved.