Stability of hydrogenated nanocrystalline silicon thin-film transistors

Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150 degreesC) and high deposition rates (10 Angstrom /s). These films, with crystalline frac tions over 90%, were incorporated as the active layers of bottom-gate thin- film transistors. The initial field-effect mobilities of these devices were over 0.5 cm(2)/V s and the threshold voltages lower than 4 V In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. H ence, they are promising candidates to be considered in the future for appl ications such as flat-panel displays. (C) 2001 Elsevier Science B.V. All ri ghts reserved.