Photoluminescence of Er3+ near 1.54 mu m in silicon-rich silicon oxide films

Excitation of the intra-4f-shell luminescence near 1.5 mum in silicon-rich silicon oxide is studied. Silicon-rich silicon oxide was produced by high d ose implantation of Si+ ions into SiO2 layers grown on silicon. Erbium dopi ng was also performed using implantation of Er+ ions at an energy of 800 ke V. An evidence is presented that transfer of energy from defects related to excess silicon in silica is the dominant mechanism of excitation of Er3+ f or optical pumping in the UV-blue wavelength range. Si-nanocrystals created by annealing at 1100 degreesC rather compete for excitation with erbium th an transfer energy to Er3+.