Cd(Mg)Se single layers and CdSe/CdMgSe heterostructures grown by molecularbeam epitaxy on InAs(001) substrates

Authors
Kaygorodov, VA Sorokin, VS Sedova, IV Nekrutkina, OV Sorokin, SV Shubina, TV Toropov, AA Ivanov, SV
Citation
Va. Kaygorodov et al., Cd(Mg)Se single layers and CdSe/CdMgSe heterostructures grown by molecularbeam epitaxy on InAs(001) substrates, ACT PHY P A, 100(3), 2001, pp. 443-450
Citations number
18
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA POLONICA A
ISSN journal
05874246 → ACNP
Volume
100
Issue
3
Year of publication
2001
Pages
443 - 450
Database
ISI
SICI code
0587-4246(200109)100:3<443:CSLACH>2.0.ZU;2-9
Abstract
We report on molecular beam epitaxy of CdSe/CdMgSe heterostructures on InAs (001) substrates and studies of their optical and structural properties. Th e CdMgSe energy gap versus composition dependence is determined. The zinc-b lende MgSe band-gap energy and optical bowing parameter are estimated to be 4.05 eV and 0.2 eV, respectively. The CdSe quantum wells embedded into CdM gSe barriers demonstrate intense photoluminescence. Effective mass approxim ation calculations of electron-heavy hole optical transitions in CdSe quant um well are in a good agreement with the experimental data obtained.