Atmospheric pressure chemical vapour deposition of selenium and tellurium films by UV laser photolysis of diethyl selenium and diethyl tellurium

Citation
J. Pola et al., Atmospheric pressure chemical vapour deposition of selenium and tellurium films by UV laser photolysis of diethyl selenium and diethyl tellurium, APPL ORGAN, 15(11), 2001, pp. 924-930
Citations number
34
Categorie Soggetti
Chemistry
Journal title
APPLIED ORGANOMETALLIC CHEMISTRY
ISSN journal
02682605 → ACNP
Volume
15
Issue
11
Year of publication
2001
Pages
924 - 930
Database
ISI
SICI code
0268-2605(200111)15:11<924:APCVDO>2.0.ZU;2-A
Abstract
Excimer laser-induced photolysis of gaseous diethyl selenium and diethyl te llurium (C2H5)(2)M (M = Se, Te) is controlled by cleavage of both M-C bonds , it yields C-1-C-4 hydrocarbons (ethene as major product) and results in c hemical vapour deposition of selenium films and nanosized tellurium powder. The selenium and tellurium properties were characterized by X-ray photoele ctron spectroscopy and Scanning electron Microscopy techniques. Copyright ( C) 2001 John Wiley & Sons, Ltd.