H. Donnerberg et al., FORMATION OF LOCALIZED HOLE STATES IN COMPLEX OXIDES .1. HOLE STATES IN BATIO3, Journal of physics. Condensed matter, 9(30), 1997, pp. 6359-6370
Defect electrons (holes) play an important role in most technologicall
y important complex oxides. In this contribution we present the first
detailed characterization of localized hole states in such materials.
Our investigations employ advanced embedded-cluster calculations which
consistently include electron correlations and defect-induced lattice
relaxations. This is necessary in order to account for the variety of
possible hole-state manifestations. Even in highly ionic oxides such
as MgO, there exists a delicate interplay between electron correlation
s and defect-induced lattice deformations.