FORMATION OF LOCALIZED HOLE STATES IN COMPLEX OXIDES .1. HOLE STATES IN BATIO3

Citation
H. Donnerberg et al., FORMATION OF LOCALIZED HOLE STATES IN COMPLEX OXIDES .1. HOLE STATES IN BATIO3, Journal of physics. Condensed matter, 9(30), 1997, pp. 6359-6370
Citations number
34
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
9
Issue
30
Year of publication
1997
Pages
6359 - 6370
Database
ISI
SICI code
0953-8984(1997)9:30<6359:FOLHSI>2.0.ZU;2-9
Abstract
Defect electrons (holes) play an important role in most technologicall y important complex oxides. In this contribution we present the first detailed characterization of localized hole states in such materials. Our investigations employ advanced embedded-cluster calculations which consistently include electron correlations and defect-induced lattice relaxations. This is necessary in order to account for the variety of possible hole-state manifestations. Even in highly ionic oxides such as MgO, there exists a delicate interplay between electron correlation s and defect-induced lattice deformations.