We investigate the charge injection efficiency of plasma treated indium. ti
n oxide (ITO) anodes into copper phthalocyanine (CuPc) in single-layer diod
es fabricated under inert conditions. Using electroabsorption and Kelvin p'
robe surface potential measurements, we demonstrate that the effective ITO
work function is pinned at the energy level of the highest occupied molecul
ar orbital of CuPc. We ascribe this effect to oxygen doping from the ITO el
ectrode. Such doping results in high-efficiency hole injection from ITO as
inferred from the current-voltage characteristics. We find evidence for a t
ime-dependent modification of the device characteristics particularly in re
verse bias that we attribute to oxygen diffusion from ITO into bulk CuPc. O
xygen plasma treatment of ITO produces an oxide surface that is stable with
respect to oxygen diffusion. (C) 2001 Elsevier Science B.V. All rights res
erved.