The electronic structure of ZnSb2O6 is calculated by using the FLAPW method
and the DV-X alpha method. The valence band with the width of ca. 10.5 eV
is roughly classified into the two bands, where O 2p orbitals are dominant
and hybridize with Zn 3d and Sb 5s orbitals. On the other hand, the lower c
onduction band is mainly constructed from Sb 5s orbitals which have large s
patial extent. Therefore, ZnSb2O6 crystal is expected to have large electro
n mobility with doping carriers.