Photoconductivity of semi-insulating SiC : < V,Al >

Authors
Reshanov, SA Rastegaev, VP
Citation
Sa. Reshanov et Vp. Rastegaev, Photoconductivity of semi-insulating SiC : < V,Al >, DIAM RELAT, 10(11), 2001, pp. 2035-2038
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
11
Year of publication
2001
Pages
2035 - 2038
Database
ISI
SICI code
0925-9635(200111)10:11<2035:POSS:<>2.0.ZU;2-R
Abstract
Temperature-dependent electrical resistivity, optical transmission and phot oconductivity measurements of semi-insulating bulk SiC:<V,Al > are reported . X-Ray spectral microanalysis was used to determine V, Ti, Cr impurity con centrations. Optical transmission measurements on semi-insulating material indicate the presence of absorption peaks at 1.13 and 1.26 eV, whose intens ities correlate with the vanadium concentration level. A visible spectrum p hotoconductivity in semi-insulating SiC:<V,Al > was discovered, possessing long-time relaxation: 10(2)-10(3) s at 300 K. (C) 2001 Elsevier Science B.V . All rights reserved.