The early history of IBM's SiGe mixed signal technology

Citation
Dl. Harame et Bs. Meyerson, The early history of IBM's SiGe mixed signal technology, IEEE DEVICE, 48(11), 2001, pp. 2555-2567
Citations number
76
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
11
Year of publication
2001
Pages
2555 - 2567
Database
ISI
SICI code
0018-9383(200111)48:11<2555:TEHOIS>2.0.ZU;2-P
Abstract
The history of Silicon Germanium (SiGe) at IBM is a story of persistence. T he program began with an idea to replace a conventional implantation step, used in every silicon semiconductor bipolar process, by growing an in-situ doped alloy (SiGe). Many people thought the idea was of value only for a fe w exotic niche "research" applications. This is a story about how a small g roup of people persuaded a large digital computer manufacturer to invest in a new unproven technology for telecommunication applications in a field wh ich the company knew little about. It is a success story, as SiGe technolog y has now become the only BiCMOS technology in development in IBM and is in the roadmaps of every major telecommunication company.