The diffusion equation has some applications relevant to charge collection
from ion tracks in silicon devices. Textbook solutions for the diffusion eq
uation are available only for a few simple boundary geometries and special
types of boundary conditions. A broader class of geometries was previously
treated via a charge-collection efficiency function, but this applies only
to total (integrated in time from zero to infinity) collected charge. The e
arlier work took advantage of the fact that Laplace's equation can be solve
d for a broad class of geometries. This paper extends the earlier work so t
hat it applies to charge collected up to an arbitrary time. A time-dependen
t charge-collection efficiency function can be estimated for any geometry s
uch that Laplace's equation has been solved. In particular, the analysis pe
rmits a comparison between diffusion calculations and a computer simulation
of charge collection from an ion track. This comparison supports an earlie
r model in which charge collection, including a so-called "prompt" componen
t, is driven by diffusion. The analysis applies to arbitrary track location
s and directions. It also provides the option of treating a device geometry
as two-dimensional in rectangular coordinates (if desired) while simultane
ously treating the track as a line instead of a plane. Simulation codes hav
ing such flexibility regarding geometry are difficult to use, so the analys
is makes the study of geometry effects accessible to a larger number of inv
estigators.