Total-dose effects in double-gate-controlled NPN bipolar transistors

Authors
Vandooren, A Yuan, J Flandre, D Colinge, JP
Citation
A. Vandooren et al., Total-dose effects in double-gate-controlled NPN bipolar transistors, IEEE NUCL S, 48(5), 2001, pp. 1694-1699
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
48
Issue
5
Year of publication
2001
Pages
1694 - 1699
Database
ISI
SICI code
0018-9499(200110)48:5<1694:TEIDNB>2.0.ZU;2-E
Abstract
The sensitivity to radiation-induced degradation of new double-gate-control led lateral NPN bipolar transistors has been investigated. The radiation ha rdness is improved when the device is working in the accumulation mode. The effect of positive charge and increased surface recombination velocity is analyzed by means of device simulations and experimental results.