Electron transport in metal-amorphous silicon-metal memory devices

Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon- V (Cr/p(+)a-Si:H/V) analogue memory switching devices have been measured ov er a wide range of device resistance from several kilo-ohms to several hund red kilo-ohms, and over a temperature range from 13K to 300K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelli ng mechanism. A modified filamentary structure for the Cr/p(+)a-Si:H/V swit ching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.